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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts APPLICATION * DC/DC converters * Supply line switching * Battery charger * Driver in low supply voltage applications CHT5988ZPT CURRENT 5 Ampere SC-73/SOT-223 1.65+0.15 6.50+0.20 3.00+0.10 0.90+0.05 2.0+0.3 FEATURE * Small flat package. ( SC-73/SOT-223 ) * High current (Max.=5A). * Suitable for high packing density. * Low voltage (Max.=60V) . 3.5+0.2 7.0+0.3 * PNP Switching Transistor 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 CONSTRUCTION 0.9+0.2 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E (2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; CONDITIONS open emitter open base open collector - - - - - - - -55 - -55 MIN. MAX. -100 -60 -6 -5 -15 -1 2.0 +150 150 +150 V V V A A A W C C C 2006-7 UNIT RATING CHARACTERISTIC CURVES ( CHT5988ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE 62.5 UNIT K/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO PARAMETER Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current CONDITIONS IC= -100uA IE= -100uA VCB= -80V VEB= -6V VCE= -1V , IC= -10mA hFE DC Current Gain VCE= -1V , IC= -2A VCE= -1V , IC= -5A VCE= -1V , IC= -10A IC= -100mA , IB= -10mA IC= -1A , IB= -100mA VCE(sat) Collector-Emitter Saturation Voltage IC= -2A , IB= -200mA IC= -5A , IB= -500mA IC= -5A , IB= -500mA VCE= -1V , IC= -5A VCE= -10V , IE= -100mA VCB= -10V , IE= 0A , f=1MHz MIN. -100 -60 -6 - - 100 120 60 10 - - - - - - 100 72(Typ.) MAX. - - - -50 -10 - 300 - - -50 -140 -210 -460 -1.27 -1.2 - UNIT V V V nA nA Collector-Emitter Breakdown Voltage IC= -10mA mV VBE(sat) VBE(on) fT Cob Base-Emitter Saturation Voltage Base-Emitter on Voltage Transition Frequency Collector Output Capacitance V V MHz pF RATING CHARACTERISTIC CURVES ( CHT5988ZPT ) DC Current Gain vs Collector Current 1000 Collector Emitter Saturation Voltage vs cOllector Current 1000 VCE = -1V -VCE(sat) COLLECTOR EMITTER SATURATION VOLTAGE ( mV ) IC/IB = 10 DC CURRENT GAIN 100 100 10 hFE 10 0.01 0.1 1 10 1.0 0.01 0.1 1 10 -IC COLLECTOR CURRENT ( A ) -IC COLLECTOR CURRENT ( A ) Base Emitter Saturation Voltage vs cOllector Current 10 1000 Transistion Frequencyvs Emitter Current -VBE(sat) BASE EMITTER SATURATION VOLTAGE ( mV ) 1.0 TRANSITION FREQUENCY ( MHz ) fT 100 0.1 0.01 -IC 0.1 1 10 COLLECTOR CURRENT ( A ) 10 0.01 0.1 1 IE EMITTER CURRENT ( A ) |
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