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30KP120A SAA1042V TA7303P 1A60A5 EC803 CY7C1353 XBNXX AN1780
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  Datasheet File OCR Text:
 CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Switching Transistor
VOLTAGE 60 Volts
APPLICATION
* DC/DC converters * Supply line switching * Battery charger * Driver in low supply voltage applications
CHT5988ZPT
CURRENT 5 Ampere
SC-73/SOT-223
1.65+0.15 6.50+0.20 3.00+0.10 0.90+0.05 2.0+0.3
FEATURE
* Small flat package. ( SC-73/SOT-223 ) * High current (Max.=5A). * Suitable for high packing density. * Low voltage (Max.=60V) .
3.5+0.2
7.0+0.3
* PNP Switching Transistor
0.70+0.10 0.70+0.10 2.30+0.1
2.0+0.3
CONSTRUCTION
0.9+0.2
0.70+0.10 4.60+0.1
0.27+0.05 0.01~0.10
1 1 Base
3
2
CIRCUIT
(1) B
C (3)
2 Emitter 3 Collector ( Heat Sink )
E (2)
Dimensions in millimeters
SC-73/SOT-223
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; CONDITIONS open emitter open base open collector - - - - - - - -55 - -55 MIN. MAX. -100 -60 -6 -5 -15 -1 2.0 +150 150 +150 V V V A A A W C C C
2006-7
UNIT
RATING CHARACTERISTIC CURVES ( CHT5988ZPT )
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE 62.5 UNIT K/W
CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO PARAMETER Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current CONDITIONS IC= -100uA IE= -100uA VCB= -80V VEB= -6V VCE= -1V , IC= -10mA hFE DC Current Gain VCE= -1V , IC= -2A VCE= -1V , IC= -5A VCE= -1V , IC= -10A IC= -100mA , IB= -10mA IC= -1A , IB= -100mA VCE(sat) Collector-Emitter Saturation Voltage IC= -2A , IB= -200mA IC= -5A , IB= -500mA IC= -5A , IB= -500mA VCE= -1V , IC= -5A VCE= -10V , IE= -100mA VCB= -10V , IE= 0A , f=1MHz MIN. -100 -60 -6 - - 100 120 60 10 - - - - - - 100 72(Typ.) MAX. - - - -50 -10 - 300 - - -50 -140 -210 -460 -1.27 -1.2 - UNIT V V V nA nA
Collector-Emitter Breakdown Voltage IC= -10mA
mV
VBE(sat) VBE(on) fT Cob
Base-Emitter Saturation Voltage Base-Emitter on Voltage Transition Frequency Collector Output Capacitance
V V MHz pF
RATING CHARACTERISTIC CURVES ( CHT5988ZPT )
DC Current Gain vs Collector Current
1000
Collector Emitter Saturation Voltage vs cOllector Current
1000
VCE = -1V
-VCE(sat) COLLECTOR EMITTER SATURATION VOLTAGE ( mV )
IC/IB = 10
DC CURRENT GAIN
100
100
10
hFE
10 0.01
0.1
1
10
1.0 0.01
0.1
1
10
-IC
COLLECTOR CURRENT ( A )
-IC
COLLECTOR CURRENT ( A )
Base Emitter Saturation Voltage vs cOllector Current
10
1000
Transistion Frequencyvs Emitter Current
-VBE(sat) BASE EMITTER SATURATION VOLTAGE ( mV )
1.0
TRANSITION FREQUENCY ( MHz ) fT
100
0.1
0.01 -IC 0.1 1 10 COLLECTOR CURRENT ( A )
10
0.01
0.1
1
IE
EMITTER CURRENT ( A )


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